JPS6097601A - サーミスタ用酸化物半導体磁器の製造方法 - Google Patents
サーミスタ用酸化物半導体磁器の製造方法Info
- Publication number
- JPS6097601A JPS6097601A JP20511583A JP20511583A JPS6097601A JP S6097601 A JPS6097601 A JP S6097601A JP 20511583 A JP20511583 A JP 20511583A JP 20511583 A JP20511583 A JP 20511583A JP S6097601 A JPS6097601 A JP S6097601A
- Authority
- JP
- Japan
- Prior art keywords
- atoms
- thermistor
- oxide semiconductor
- temperature
- semiconductor porcelain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 229910052573 porcelain Inorganic materials 0.000 title claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000007496 glass forming Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 238000001513 hot isostatic pressing Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20511583A JPS6097601A (ja) | 1983-11-01 | 1983-11-01 | サーミスタ用酸化物半導体磁器の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20511583A JPS6097601A (ja) | 1983-11-01 | 1983-11-01 | サーミスタ用酸化物半導体磁器の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6097601A true JPS6097601A (ja) | 1985-05-31 |
| JPH0572721B2 JPH0572721B2 (en]) | 1993-10-12 |
Family
ID=16501664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20511583A Granted JPS6097601A (ja) | 1983-11-01 | 1983-11-01 | サーミスタ用酸化物半導体磁器の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6097601A (en]) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63104304A (ja) * | 1986-10-21 | 1988-05-09 | 松下電器産業株式会社 | サ−ミスタ用酸化物半導体の製造方法 |
| JP2005150289A (ja) * | 2003-11-13 | 2005-06-09 | Tdk Corp | サーミスタ用組成物及びサーミスタ素子 |
| KR20220114795A (ko) * | 2021-02-09 | 2022-08-17 | 한국전자통신연구원 | 레이저 다이오드 및 그의 제조 방법 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685802A (en) * | 1979-12-14 | 1981-07-13 | Matsushita Electric Ind Co Ltd | Oxide semiconductor for thermistor |
-
1983
- 1983-11-01 JP JP20511583A patent/JPS6097601A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685802A (en) * | 1979-12-14 | 1981-07-13 | Matsushita Electric Ind Co Ltd | Oxide semiconductor for thermistor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63104304A (ja) * | 1986-10-21 | 1988-05-09 | 松下電器産業株式会社 | サ−ミスタ用酸化物半導体の製造方法 |
| JP2005150289A (ja) * | 2003-11-13 | 2005-06-09 | Tdk Corp | サーミスタ用組成物及びサーミスタ素子 |
| KR20220114795A (ko) * | 2021-02-09 | 2022-08-17 | 한국전자통신연구원 | 레이저 다이오드 및 그의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0572721B2 (en]) | 1993-10-12 |
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